| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a laser diode element capable of breaking a semiconductor substrate without causing a crystal defect in an active layer. <P>SOLUTION: A manufacturing method of a laser diode element according to this invention comprises the steps of: forming a plurality of semiconductor layers including an active layer on a surface of a semiconductor substrate; forming an isolation groove by etching some of the plurality of semiconductor layers from the surfaces of the plurality of semiconductor layers at least to the active layer; forming a scribe groove along the isolation groove in a portion immediately below the isolation groove in a rear surface of the semiconductor substrate; and forming a cleavage surface from the rear surface of the semiconductor substrate to a bottom surface of the isolation groove by breaking the semiconductor substrate, taking the scribe groove as a starting point. <P>COPYRIGHT: (C)2013,JPO&INPIT |
