I-LINE PHOTORESIST COMPOSITION AND METHOD FOR FORMING FINE PATTERN USING SAME

摘要

Disclosed are an I-line photoresist composition having thermal stability at a high temperature (200 to 250°C) and able to form a fine pattern by using an acid diffusion barrier, and a method for forming the fine pattern using the I-line photoresist composition. The I-line photoresist composition comprises: 1 to 99 mol% of a repeat unit that is represented by chemical formula 1 of the present description, and a polymer containing 1 to 99 mol% of a repeat unit, which is selected from a group consisting of a repeat unit that is represented by chemical formula 2 of the present description, a repeat unit that is represented by chemical formula 3 of the present description, and a mixture of the above repeat units; a photosensitive compound containing at least two diazonaphthoquinone (DNQ) groups; and an organic solvent.