| 摘要 |
<p>PURPOSE: An oxygen containing precursors for photovoltaic passivation is provided to optimize a film/layer thickness for the refractive index of precursor. CONSTITUTION: A photovoltaic cell has a front surface and a rear surface. A first silicon precursor is provided. A silicon oxide layer having a thickness of 5-70nm is deposited on the photovoltaic cell. A second silicon precursor and a nitrogen source are provided. A silicon nitride layer having a thickness of 20-200nm is deposited on the silicon oxide layer. [Reference numerals] (AA,GG,LL) Front surface metallization; (BB,HH,MM,UU) Front surface passivation layer; (CC,II,NN) P-doped silicon emitter; (DD,JJ,OO) N-doped silicon absorbent; (FF,KK,QQ) Rear surface metallization; (PP,WW) Rear surface passivation layer; (RR) N or p-doped silicon substrate; (SS) N+-doped silicon; (TT) Front surface anti-reflection coating; (VV) P+-doped silicon</p> |
