发明名称 |
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
A collector layer having p type is formed on a silicon carbide substrate having n type. A drift layer having n type is formed on a top surface side of the collector layer. A body region provided on the drift layer and having p type, and an emitter region provided on the body region to be separated from the drift layer by the body region and having n type are formed. A bottom surface side of the collector layer is exposed by removing the silicon carbide substrate.
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申请公布号 |
US2013078771(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201213613858 |
申请日期 |
2012.09.13 |
申请人 |
HIYOSHI TORU;MASUDA TAKEYOSHI;WADA KEIJI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HIYOSHI TORU;MASUDA TAKEYOSHI;WADA KEIJI |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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