发明名称 |
METHOD AND SYSTEM FOR FORMING CHALCOGENIDE SEMICONDUCTOR MATERIALS USING SPUTTERING AND EVAPORATION FUNCTIONS |
摘要 |
A method and system for forming a chalcogenide or chalcopyrite-based semiconductor material provide for the simultaneous deposition of metal precursor materials from a target and Se radials from a Se radical generation system. The Se radical generation system includes an evaporator that produces an Se vapor and a plasma chamber that uses a plasma to generate a flux of Se radicals. Multiple such deposition operations may take place in sequence, each having the deposition temperature accurately controlled. The deposited material may include a compositional concentration gradient or may be a composite material, and may be used as an absorber layer in a solar cell.
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申请公布号 |
US2013075247(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201113239989 |
申请日期 |
2011.09.22 |
申请人 |
LEE WEN-CHIN;YEN WEN-TSAI;CHIU YUNG-SHENG;CHAO YING CHEN;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE WEN-CHIN;YEN WEN-TSAI;CHIU YUNG-SHENG;CHAO YING CHEN |
分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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