发明名称 PHOTOMASK BLANK, PHOTOMASK AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a photomask blank having a novel hard mask film that enables processing with increased accuracy during processing of a fine pattern on an optical film formed of a transition metal silicon compound material using a thinner hard mask film made of a chromium-based material, a photomask manufacturing with the photomask blank, and a manufacturing method for the photomask. <P>SOLUTION: The photomask blank comprises: a transparent substrate; an optical film formed on the transparent substrate and formed of a transition metal silicon compound material; and a hard mask film for precision processing of the optical film. The hard mask film is a multilayer film formed of a chromium-based material. The multilayer film includes: a first layer that is disposed adjoining to the optical film, is formed of a chromium-based material containing oxygen by 20 to 60 atom% and has a thickness of 0.5 nm or more and less than 5.0 nm; and a second layer that is disposed adjoining to the first layer, is formed of a chromium-based material containing chromium by 50 atom% or more and has a lower oxygen content percentage than that of the first layer. The thickness of the entire hard mask film is 2.0 nm or more and less than 10 nm. Etching durability of a hard mask film against fluorine-based dry etching can be improved and, an optical film comprising a transition metal silicon compound material can be precisely processed by use of a hard mask pattern even when a thinner hard mask film is used. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013057739(A) 申请公布日期 2013.03.28
申请号 JP20110195049 申请日期 2011.09.07
申请人 SHIN ETSU CHEM CO LTD 发明人 INAZUKI SADAOMI;IGARASHI SHINICHI;NISHIKAWA KAZUHIRO;YOSHIKAWA HIROKI
分类号 G03F1/54 主分类号 G03F1/54
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