发明名称 MULTILAYER CRUCIBLE FOR CASTING SILICON INGOT AND METHOD FOR PRODUCING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a multilayer crucible for casting a silicon ingot which can suppress dissolution of oxygen into the silicon ingot. <P>SOLUTION: The multilayer crucible 1 for casting the silicon ingot includes an outer layer silica layer 3 including at least one layer of an outer layer stucco layer 30 made by binding 500-1,500 &mu;m coarse fused silica sand 31 with silica and provided inside a mold 2, and an inner layer silica layer 4 including at least one layer of an inner layer stucco layer 40 made by binding 50-300 &mu;m fine fused silica sand 41 with silica and provided inside the outer layer silica layer 3, wherein the inner layer stucco layer 40' of the outermost surface of the inner layer silica layer 4 contains barium hydroxide or barium carbonate having 0.1-0.01 &mu;m average particle size. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013056798(A) 申请公布日期 2013.03.28
申请号 JP20110196017 申请日期 2011.09.08
申请人 MITSUBISHI MATERIALS CORP;MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO LTD 发明人 WAKITA SABURO;TSUZUKIBASHI KOJI;IKEDA HIROSHI;KANAI MASAHIRO
分类号 C01B33/02 主分类号 C01B33/02
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