发明名称 Method for Three Dimensional Integrated Circuit Fabrication
摘要 A method for fabricating three dimensional integrated circuits comprises providing a wafer stack wherein a plurality of semiconductor dies are mounted on a first semiconductor die, forming a molding compound layer on the first side of the first semiconductor die, wherein the plurality of semiconductor dies are embedded in the molding compound layer. The method further comprises grinding a second side of the first semiconductor die until a plurality of through vias become exposed, attaching the wafer stack to a tape frame and dicing the wafer stack to separate the wafer stack into a plurality of individual packages.
申请公布号 US2013075892(A1) 申请公布日期 2013.03.28
申请号 US201113246553 申请日期 2011.09.27
申请人 LIN JING-CHENG;WU WENG-JIN;SHIH YING-CHING;HUNG JUI-PIN;LU SZU WEI;JENG SHIN-PUU;YU CHEN-HUA;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN JING-CHENG;WU WENG-JIN;SHIH YING-CHING;HUNG JUI-PIN;LU SZU WEI;JENG SHIN-PUU;YU CHEN-HUA
分类号 H01L23/48;H01L21/50 主分类号 H01L23/48
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