发明名称 |
Tilt Implantation for Forming FinFETs |
摘要 |
In a method for forming FinFETs, a photo resist is formed to cover a first semiconductor fin in a wafer, wherein a second semiconductor fin adjacent to the first semiconductor fin is not covered by the photo resist. An edge of the photo resist between and parallel to the first and the second semiconductor fins is closer to the first semiconductor fin than to the second semiconductor fin. A tilt implantation is performed to form a lightly-doped source/drain region in the second semiconductor fin, wherein the first tilt implantation is tilted from the second semiconductor fin toward the first semiconductor fin.
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申请公布号 |
US2013078772(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201113247570 |
申请日期 |
2011.09.28 |
申请人 |
YUAN FENG;LEE TSUNG-LIN;YU SHAO-MING;WANN CLEMENT HSINGJEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YUAN FENG;LEE TSUNG-LIN;YU SHAO-MING;WANN CLEMENT HSINGJEN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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