发明名称 |
VERTICAL PNP DEVICE IN A SILICON-GERMANIUM BICMOS PROCESS AND MANUFACTURING METHOD THEREOF |
摘要 |
A vertical PNP device in a silicon-germanium (SiGe) BiCMOS process is disclosed. The device is formed in a deep N-well and includes a collector region, a base region and an emitter region. The collector region has a two-dimensional L-shaped structure composed of a lightly doped first P-type ion implantation region and a heavily doped second P-type ion implantation region. The collector region is picked up by P-type pseudo buried layers formed at bottom of the shallow trench field oxide regions. A manufacturing method of vertical PNP device in a SiGe BiCMOS process is also disclosed. The method is compatible with the manufacturing processes of a SiGe heterojunction bipolar transistor in the SiGe BiCMOS process. |
申请公布号 |
US2013075730(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201213608545 |
申请日期 |
2012.09.10 |
申请人 |
QIAN WENSHENG;SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD. |
发明人 |
QIAN WENSHENG |
分类号 |
H01L29/732;H01L21/331 |
主分类号 |
H01L29/732 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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