FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

Provided are a field effect transistor and a manufacturing method thereof. The field effect transistor includes: a substrate (101); a source (S) and a drain (D), one of which is formed on a bulge (100) on the upper surface of the substrate (101), and the other in the substrate (101) at the bottom of and to the side of the bulge (100); a gate (G) formed at a position where the bulge (100) joins with the upper surface of the substrate (101); a gate oxidation layer (103) formed between the gate (G) and the bulge (100) and between the gate (G) and the upper surface of the substrate (101). The provided field effect transistor is of a vertical structure, the source (S) is located at the top of the bulge (100), while the drain (D) is located inside the substrate (101), the source (S) and the drain (D) are not within the same plane, and therefore, the area of the field effect transistor can be reduced significantly, thus improving the integrity of the integrated circuit and reducing costs.