发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor device according to the present embodiment comprises a lower electrode provided above a semiconductor substrate and made of metal, an upper electrode provided above the lower electrode and made of metal, and a crystal layer provided between the lower electrode and the upper electrode. A thickness of each of the lower electrode and the upper electrode is smaller than a thickness of a skin layer deriving from a skin effect corresponding to a frequency of a microwave used to crystallize the crystal layer.
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申请公布号 |
US2013075844(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201213546379 |
申请日期 |
2012.07.11 |
申请人 |
MIYANO KIYOTAKA;AOYAMA TOMONORI |
发明人 |
MIYANO KIYOTAKA;AOYAMA TOMONORI |
分类号 |
H01L21/02;H01L29/82 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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