Memory device and method of performing a read operation within a memory device

摘要

A memory device includes an array of memory cells arranged in rows and columns, each memory cell being configured to connect to separate write and read paths. The memory cells within each column form a plurality of memory cell groups and are coupled to the read data output circuitry by an associated read path. For each column, the associated read path comprises both a local path portion provided for each memory cell group and a global path portion shared by all memory cells within the column. The global path portion is then connected to the read data output circuitry. Each local path portion is coupled to an associated global path control circuit which is configured during the read operation to control a signal level of the associated global path portion in dependence on a signal level present on the associated local path portion.