| 摘要 |
The present invention belongs to the technical field of integrated semiconductor circuits, and relates to a method used in a process no greater than 32 nm to improve the electromigration resistance of Cu interconnects. Coating layers on Cu interconnects, such as CuSi3, CuGe, and CuSiN, can be prepared by autoregistration, and with the use of new impervious layer materials, the electromigration resistance of Cu interconnects can be largely improved and the high conductivity thereof can be kept, which provides an ideal solution for interconnection process for process nodes no greater than 32 nm. |
