| 摘要 |
PURPOSE: A semiconductor light emitting device is provided to overcome the reduction of internal quantum efficiency due to internal electric field by including a sub barrier layer in a sub quantum well layer. CONSTITUTION: A first semiconductor layer includes a first conductivity. A second semiconductor layer(113) includes a second conductivity which is different from the first conductivity. An active layer is interposed between the first semiconductor layer and the second semiconductor layer. The active layer includes a quantum well layer(132) and a barrier layer(122). The quantum well layer includes a sub quantum well layer and a sub barrier layer. |
