| 摘要 |
A light-emitting diode is based on an undoped intrinsic SiC substrate on which are grown: an insulating buffer or nucleation structure; a light-emitting structure; window layers; a semi-transparent conductive layer; a bond pad adhesion layer; a p-type electrode bond pad; and an n-type electrode bond pad. In one embodiment, the light-emitting surface of the substrate is roughened to maximize light emission. |
