发明名称 CMOS IMAGE SENSOR WITH PERFORMANCE IMPROVED BY INTEGRATING PIXELS WITH BURST RESET OPERATION
摘要 <P>PROBLEM TO BE SOLVED: To provide a substantial pixel design that can be used in a small pixel and a high-performance CMOS image sensor array. <P>SOLUTION: A reset transistor of the invention comprises: a floating diffusion region for detecting charges; a bonding region for discharging charges; a gate for controlling the charge transfer from the floating diffusion region to the bonding region in response to control of a reset signal; and a potential well integrated at a bottom part of the gate. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013058805(A) 申请公布日期 2013.03.28
申请号 JP20120273440 申请日期 2012.12.14
申请人 INTELLECTUAL VENTURESII LLC 发明人 JAROSOLAV HYNECEK
分类号 H01L27/146;H04N5/335;H04N5/355;H04N5/357;H04N5/369;H04N5/374;H04N5/376 主分类号 H01L27/146
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