| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-performance stacked thin-film photoelectric conversion device, capable of enhancing flexibility and improving production efficiency in manufacturing processes. <P>SOLUTION: A method for manufacturing a stacked thin-film photoelectric conversion device at least including an amorphous photoelectric conversion unit, an n-type silicon composite layer and a crystalline photoelectric conversion unit in order from a light incident side, includes the steps of: forming the amorphous photoelectric conversion unit; forming the n-type silicon composite layer; exposing the formed n-type silicon composite layer in the atmosphere; subjecting the n-type silicon composite layer subjected to the atmosphere exposure to atmospheric pressure plasma treatment when a mixed gas of a dilution gas composed of nitrogen or a rare gas, and an oxygen-contained vapor is introduced; and then forming a p-type semiconductor layer of the crystalline photoelectric conversion unit in a decompressed state. The method may include no step of further forming the n-type silicon composite layer after the step of subjecting the n-type silicon composite layer to the atmospheric pressure plasma treatment. <P>COPYRIGHT: (C)2013,JPO&INPIT |
