发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
In a method, a gate dielectric film is formed on a semiconductor substrate. A gate electrode is formed on the gate dielectric film. Impurities of a first conduction-type are introduced into a drain-layer formation region. The impurities of the first conduction-type in the drain-layer formation region are activated by performing heat treatment. Single crystals of the semiconductor substrate in a source-layer formation region are amorphized by introducing inert impurities into the source-layer formation region. Impurities of a second conduction-type is introduced into the source-layer formation region. At least an amorphous semiconductor in the source-layer formation region is brought into a single crystal semiconductor and the impurities of the second conduction-type in the source-layer formation region is activated by irradiating the semiconductor substrate with microwaves. The impurities of the second conduction-type in the source-layer formation region is shallower than the impurities of the first conduction-type in the drain-layer formation region.
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申请公布号 |
US2013075830(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201213548653 |
申请日期 |
2012.07.13 |
申请人 |
MIYANO KIYOTAKA;MIYATA TOSHITAKA |
发明人 |
MIYANO KIYOTAKA;MIYATA TOSHITAKA |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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