发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF |
摘要 |
A method of fabricating a semiconductor device is disclosed. A dummy gate feature is formed between two active gate features over a substrate. An isolation structure is in the substrate and the dummy gate feature is over the isolation structure. In at least one embodiment, a non-conductive material is used for forming the dummy gate feature to replace a sacrificial gate electrode.
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申请公布号 |
US2013075796(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201113247286 |
申请日期 |
2011.09.28 |
申请人 |
TSAI TSUNG-CHIEH;SHIH YUNG-CHE ALBERT;TING JYH-KANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAI TSUNG-CHIEH;SHIH YUNG-CHE ALBERT;TING JYH-KANG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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