| 摘要 |
The present invention discloses a double gate transistor and a method of fabricating said transistor, said transistor comprising: a semiconductor layer on a substrate; a fin structure formed in said semiconductor layer, said fin structure having two end portions for forming source and drain regions and a middle portion between said two end portions for forming a channel region, said middle portion including two opposed side surfaces perpendicular to a substrate surface; a first gate dielectric layer and a first gate disposed on one side surface of said middle portion; and a second gate dielectric layer and a second gate disposed on the other side surface of said middle portion.
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