| 摘要 |
Semiconductor devices and methods for making such devices are described. These devices contain a semiconductor substrate with a first portion containing an integrated circuit device connected to a gate pad in an upper portion of the substrate and a second portion containing a Zener diode having a ESD rating up to about 10000 Volts, where the Zener diode is located around the periphery of the substrate. MW radiation can be used to form a single crystal Si material in a trench of the Zener diode 20, reducing the grain boundaries per unit area of the Zener diode by growing (or re-growing) the Si grains to a larger size while consuming the smaller grains. Thus, the leakage current from the Zener diode does not increase when the cross-sectional area of the Zener diode is increased from just surrounding the gate pad to encompass more of the substrate. Other embodiments are described.
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