发明名称 |
Electrode Structure Including Graphene And Field Effect Transistor Having The Same |
摘要 |
According to example embodiments, an electrode structure includes a graphene layer on a semiconductor layer and an electrode containing metal on the graphene layer. A field effect transistor (FET) may include the electrode structure.
|
申请公布号 |
US2013075700(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201213431031 |
申请日期 |
2012.03.27 |
申请人 |
YANG HEE-JUN;PARK SEONG-JUN;CHUNG HYUN-JONG;HEO JIN-SEONG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG HEE-JUN;PARK SEONG-JUN;CHUNG HYUN-JONG;HEO JIN-SEONG |
分类号 |
H01L29/772;B82Y99/00;H01L29/12 |
主分类号 |
H01L29/772 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|