发明名称 Electrode Structure Including Graphene And Field Effect Transistor Having The Same
摘要 According to example embodiments, an electrode structure includes a graphene layer on a semiconductor layer and an electrode containing metal on the graphene layer. A field effect transistor (FET) may include the electrode structure.
申请公布号 US2013075700(A1) 申请公布日期 2013.03.28
申请号 US201213431031 申请日期 2012.03.27
申请人 YANG HEE-JUN;PARK SEONG-JUN;CHUNG HYUN-JONG;HEO JIN-SEONG;SAMSUNG ELECTRONICS CO., LTD. 发明人 YANG HEE-JUN;PARK SEONG-JUN;CHUNG HYUN-JONG;HEO JIN-SEONG
分类号 H01L29/772;B82Y99/00;H01L29/12 主分类号 H01L29/772
代理机构 代理人
主权项
地址