发明名称 |
METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE BASED DEVICES |
摘要 |
A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed regions of the III-nitride substrate. The method also includes heating the III-nitride substrate to a predetermined temperature and placing a dual-precursor gas adjacent the exposed regions of the III-nitride substrate. The dual-precursor gas includes a nitrogen source and a dopant source. The method further includes maintaining the predetermined temperature for a predetermined time period, forming p-type III-nitride regions adjacent the exposed regions of the III-nitride substrate, and removing the masking layer. |
申请公布号 |
US2013075748(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201113240877 |
申请日期 |
2011.09.22 |
申请人 |
BOUR DAVID P.;BROWN RICHARD J.;KIZILYALLI ISIK C.;PRUNTY THOMAS R.;ROMANO LINDA;EDWARDS ANDREW P.;NIE HUI;RAJ MAHDAN;EPOWERSOFT, INC. |
发明人 |
BOUR DAVID P.;BROWN RICHARD J.;KIZILYALLI ISIK C.;PRUNTY THOMAS R.;ROMANO LINDA;EDWARDS ANDREW P.;NIE HUI;RAJ MAHDAN |
分类号 |
H01L29/207;H01L21/22;H01L21/265 |
主分类号 |
H01L29/207 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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