ELECTRIC POWER SEMICONDUCTOR DEVICE

摘要

The purpose of the present invention is to provide an electric power semiconductor device which can perform stable switching operations and is highly tolerant to surges. An electric power semiconductor device according to the present invention is provided with: a second conductive type peripheral sense well (42) formed by surrounding a plurality of sense wells (41) on the surface of a drift layer (21); a first conductive type main cell source region selectively formed on the surface of a main cell well; a first conductive type sense source region (81) selectively formed on the surface of a sense well (41); a first conductive type capacitor lower electrode region (82) selectively formed on the surface of the sense peripheral well (42); a gate insulating film (30) formed on a channel region and the sense peripheral well (42); a gate electrode (50) formed on the gate insulating film (30); and a sense pad (13) electrically connected to the sense well, the sense source region (81), the sense peripheral well (42), and the capacitor lower electrode region (82).