发明名称 |
INCIDENT CAPACITIVE SENSOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a capacitive sensor device for measuring radiation. <P>SOLUTION: The device includes two sensor regions and a top plate structure. The sensor regions are made of a material that generates electron-hole pairs when radiation strikes the material. A separation region is located between the two sensor regions. The capacitance between a sensor region and the top plate is dependent upon radiation striking the sensor region. A blocking structure selectively and differentially blocks radiation having a parameter value in some range from the sensor region so as to differentially impact electron-hole pair generation in one sensor region with respect to electron-hole pair generation in the other sensor region at selected angles of incidence of the radiation. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013058753(A) |
申请公布日期 |
2013.03.28 |
申请号 |
JP20120195705 |
申请日期 |
2012.09.06 |
申请人 |
FREESCALE SEMICONDUCTOR INC |
发明人 |
MARK D HALL;MEHUL D SHROFF |
分类号 |
H01L31/00;G01T1/24;H01L31/09 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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