发明名称 INCIDENT CAPACITIVE SENSOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a capacitive sensor device for measuring radiation. <P>SOLUTION: The device includes two sensor regions and a top plate structure. The sensor regions are made of a material that generates electron-hole pairs when radiation strikes the material. A separation region is located between the two sensor regions. The capacitance between a sensor region and the top plate is dependent upon radiation striking the sensor region. A blocking structure selectively and differentially blocks radiation having a parameter value in some range from the sensor region so as to differentially impact electron-hole pair generation in one sensor region with respect to electron-hole pair generation in the other sensor region at selected angles of incidence of the radiation. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013058753(A) 申请公布日期 2013.03.28
申请号 JP20120195705 申请日期 2012.09.06
申请人 FREESCALE SEMICONDUCTOR INC 发明人 MARK D HALL;MEHUL D SHROFF
分类号 H01L31/00;G01T1/24;H01L31/09 主分类号 H01L31/00
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