| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that is formed by using an SiC substrate and improves the adhesion between a metal silicide film and a metal electrode. <P>SOLUTION: A semiconductor device includes silicon carbide, a metal silicide that is formed on the silicon carbide and has a first layer and a second layer having a carbon ratio lower than that of the first layer, and a metal electrode that is formed on the metal silicide. The second layer is formed on the first layer, the second layer contacts the metal electrode, and the average grain diameter of the metal silicide in the second layer is larger than that of the metal silicide in the first layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
