| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same of less dielectric breakdown. <P>SOLUTION: A semiconductor device manufacturing method comprises: preparing a semiconductor substrate 10 on which an electrode 14 electrically connected with an integrated circuit 13 is arranged; performing isotropic etching on a second surface 12 on the opposite side to a first surface 11 of the semiconductor substrate to form a first recess having a first inner wall surface; forming a second recess penetrating the semiconductor substrate from inside the first recess to the electrode and having a second inner wall surface 22a; performing an etch-back treatment for removing a first corner formed by the second surface and the first inner wall surface, and a second corner formed by the first inner wall surface and the second inner wall surface to form a first inner wall surface continuing the second surface and the second inner wall surface; after forming the corners, forming an insulation layer 30 having an opening 65 on a location overlapping the electrode so as to cover at least the first inner wall surface and the second inner wall surface; and forming a conductive part 40 filled in the second recess via the insulation layer, connected with the electrode and protruding form the second surface. <P>COPYRIGHT: (C)2013,JPO&INPIT |
