| 摘要 |
1,142,526. Depositing SiO 2 and P 2 O 5 . TEXAS INSTRUMENTS Inc. 26 May, 1966 [2 June, 1965], No. 23575/66. Heading C1A. [Also in Division H1] A layer comprising a mixture of SiO 2 and P 2 O 5 is deposited on substrates 16 of N-type Ge to act as a mask during a subsequent acceptor diffusion process (see Division H1). Using the apparatus shown a tube furnace 12 is initially flushed with an H 2 : N 2 mixture while the substrates 16 are heated to about 500‹ C. for 5 minutes. Oxygen is then bubbled through a liquid 20 which contains a source of Si, e.g. tetraethoxysilane or triethoxysilane, and a source of P, e.g. trimethyl or triethyl phosphate, and is passed over the Ge substrates 16. Additional oxygen is also introduced via the valve 36. During deposition the substrates 16 are maintained at 400-550‹ C. If it is also desired to deposit a layer of SiO 2 on the substrates 16, the phosphorus source is omitted from the liquid 20. |
