发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device includes: a first semiconductor layer formed on a substrate; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed on the second semiconductor layer; a gate electrode formed on the third semiconductor layer; and a source electrode and a drain electrode formed in contact with the second semiconductor layer, wherein a semiconductor material of the third semiconductor layer is doped with a p-type impurity element; and the third semiconductor layer has a jutting out region that juts out beyond an edge of the gate electrode toward a side where the drain electrode is provided.
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申请公布号 |
US2013075752(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201213602509 |
申请日期 |
2012.09.04 |
申请人 |
KOTANI JUNJI;FUJITSU LIMITED |
发明人 |
KOTANI JUNJI |
分类号 |
H01L29/778;H01L21/335;H01L29/205 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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