A photodiode has a p-doped region (2) and an n-doped region (3) in a semiconductor element (1) as well as a p-n junction (4) between the p-doped region and the n-doped region. The semiconductor element has a cavity (5) such that the p-n junction (4) has a maximum distance (d) of 30 mum from the bottom (7) of the cavity.
申请公布号
WO2012156215(A3)
申请公布日期
2013.03.28
申请号
WO2012EP58296
申请日期
2012.05.04
申请人
AMS AG;KRAFT, JOCHEN;JONAK-AUER, INGRID;MINIXHOFER, RAINER;TEVA, JORDI;TRUPPE, HERBERT
发明人
KRAFT, JOCHEN;JONAK-AUER, INGRID;MINIXHOFER, RAINER;TEVA, JORDI;TRUPPE, HERBERT
