CONTROLLED LATERAL ETCHING METHOD

摘要

Disclosed is a controlled lateral etching method, including: forming a second material layer on a first material layer which includes a protrusion; forming a sidewall on the outside of the second material layer opposite to the vertical surface of the protrusion; forming a third material layer on the second material layer and the surface of the sidewall; covering a mask layer extending along the lateral surface direction of the first material layer on the third material layer; and performing lateral etching on the layer on the side face of the protrusion.