发明名称 METHOD OF GROWING, ON A DIELECTRIC MATERIAL, NANOWIRES MADE OF SEMICONDUCTOR MATERIALS CONNECTING TWO ELECTRODES
摘要 <p>Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material.</p>
申请公布号 EP2240954(B1) 申请公布日期 2013.03.27
申请号 EP20080873890 申请日期 2008.11.27
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - CNRS - 发明人 ERNST, THOMAS;BARON, THIERRY;FERRET, PIERRE;GENTILE, PASCAL;SALEM, BASSEM
分类号 H01L21/02;B82Y10/00;H01L21/20;H01L29/06 主分类号 H01L21/02
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