发明名称 |
METHOD FOR FORMATION OF OXIDE FILM FOR SILICON WAFER |
摘要 |
The present invention provides a method for forming an oxide film on a silicon wafer, comprising: measuring surface roughness of the silicon wafer and/or crystallinity in a surface layer portion of the silicon wafer in advance; adjusting oxidizing conditions for the silicon wafer based on the measurement value; and forming the oxide film on the silicon wafer under the adjusted oxidizing conditions. As a result, there can be provided the method for forming an oxide film by which the oxidizing conditions can be adjusted based on a state of the surface and/or the surface layer of the silicon wafer before forming the oxide film and even an ultrathin oxide film can be thereby accurately formed. |
申请公布号 |
EP2273539(A4) |
申请公布日期 |
2013.03.27 |
申请号 |
EP20090735085 |
申请日期 |
2009.03.24 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
OHTSUKI, TSUYOSHI;TOBE, SATOSHI;MIZUSAWA, YASUSHI |
分类号 |
H01L21/316;H01L21/66 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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