SPUTTERING TARGET TA SHEET AND MANUFACTURING METHOD OF THE SAME
摘要
PURPOSE: A Ta(tantalum) sheet for a sputtering target and a manufacturing method thereof are provided to improve purity because the size of final grains of the Ta sheet is below 35 micrometers and is composed of a structure in which orientation is priority. CONSTITUTION: A Ta sheet manufacturing method includes the following steps: Melted and casted Ta ingots or billets are cold-forged and cold-rolled in order and are annealed at 1173-1573K in order to make the mean diameter of the grains to below 35 micrometers. The cold-forging step includes the following steps: A forging process is implemented by applying a plastic working rate of 40-60%. An intermediate forging process is implemented at below the recrystalization temperature of Ta in order to improve processability.
申请公布号
KR20130030456(A)
申请公布日期
2013.03.27
申请号
KR20110093927
申请日期
2011.09.19
申请人
KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY;9DIGIT CO., LTD.
发明人
GWON, HYEOK CHEON;IM, SUNG CHUL;LIM, YONG DEOK;KIM, HYUN MIN;WOO, SANG MO;SONG, KYU YOUNG