发明名称 NANOLAYER DEPOSITION PROCESS FOR COMPOSITE FILMS
摘要 PURPOSE: A nanolayer deposition process for a composite layer is provided to improve surface coverage properties of deposition layers by controlling substrate surface properties in a film growth process. CONSTITUTION: One or more first precursors are inputted to a reaction chamber(40). A first layer is deposited from one or more first precursors on a substrate without a limit. One or more second precursors are inputted to the reaction chamber(42). A second layer is deposited from one or more second precursors. The second precursor is removed or purged from a process chamber(43). A sequence is repeated until a desirable thickness of a composite layer is obtained(44). [Reference numerals] (40) Inputting a first precursor to deposit a thin layer; (41,43) Purging the precursor; (42) Inputting a second precursor to modify the deposited thin layer properties; (44) Repeating until the desired thickness is achieved
申请公布号 KR20130030739(A) 申请公布日期 2013.03.27
申请号 KR20120104261 申请日期 2012.09.19
申请人 ASM INTERNATIONAL N.V. 发明人 DITIZIO ROBERT ANTHONY;NGUYEN TUE;NGUYEN TAI DUNG
分类号 H01L21/205 主分类号 H01L21/205
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