| 摘要 |
PROBLEM TO BE SOLVED: To prevent a semiconductor device from being damaged by a crack generated in an element electrode in the semiconductor device constituted by soldering a heat sink block in the element electrode in one side of the semiconductor device. SOLUTION: The semiconductor device includes an element electrode 12 formed on one side of a semiconductor substrate 11, a protection layer 13 formed thereon, a semiconductor element 1 having and electrode 14 for soldering formed on the surface of the element electrode 12 facing from an opening 13a of the protection film 13, wherein a heat sink block 6 is arranged on one side of the semiconductor substrate 11, this block 6 and the electrode 14 for soldering are bonded through a solder 5, and wherein in the lower portion of the boundary portion between the end of the protection film 13 located in the opening 13a side in one side of the substrate 11 and the electrode 14 for soldering, a crack prevention film 15 which blocks the development toward the semiconductor substrate 11 side of the crack of the element electrode 12 generated in the boundary portion is intervened between the element electrode 12 and the semiconductor substrate 11. COPYRIGHT: (C)2008,JPO&INPIT |
