| 摘要 |
1,157,421. Epitaxial deposition. MONSANTO CO. 5 July, 1966 [6 July, 1965], No. 30085/66. Heading C1A. [Also in Division H5] In the epitaxial deposition of silicon on a semi-conductor substrate, the substrate is supported on an electrical resistance heating element so that only the periphery of the bottom wall of said substrate contacts the heating element and substantially isolates the rest of the bottom wall from the surrounding atmosphere. As illustrated, circular wafers of substrate material are supported in or over circular recesses 10 in the element.
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