发明名称 |
MICROWAVE BIAS-TEE USING LUMPED ELEMENT WITH WIDEBAND CHARACTERISTIC FOR HIGH POWER AMPLIFIER |
摘要 |
PURPOSE: A micro wave bias tee for a high power amplifier is provided to stably supply a bias of the high power amplifier. CONSTITUTION: First to third lines(TL1,TL2,TL3) are connected between RF+DC port and an RF port in series. A wideband DC block is placed between the second and the third lines. A fourth lint(TL4) is vertically branched between the first and the second lines to be connected. A wideband RF chock is connected between the fourth line and a DC power supply. The DC block is composed of a parallel adding circuit of a capacitor. The RF chock is composed of a serial adding circuit of an inductor. [Reference numerals] (AA) Wideband DC block; (BB) Wideband RF chock |
申请公布号 |
KR20130030389(A) |
申请公布日期 |
2013.03.27 |
申请号 |
KR20110093818 |
申请日期 |
2011.09.19 |
申请人 |
THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC) |
发明人 |
OH, HYUN SEOK;YEOM, KYUNG WHAN |
分类号 |
H03F3/60;H03F3/193 |
主分类号 |
H03F3/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|