发明名称 Memory interface circuit and semiconductor device
摘要 There is a need to provide a small-sized memory interface circuit capable of adjusting timing between a strobe signal and a data signal without interrupting a normal memory access. An expected value acquisition latch latches write data in synchronization with a clock signal. A WDLL outputs a write strobe signal WDQS. An RDLL outputs a delayed write strobe signal WDQS_d. A read data latch latches looped-back write data in synchronization with the delayed write strobe signal WDQS_d. A comparator compares the read data latch with an output from the expected value acquisition latch. A register portion stores a delay value to be placed in the RDLL. A register control portion updates a delay value in the register portion in accordance with a comparison result. A delay selection portion places a delay value read from the register portion in the RDLL.
申请公布号 US8406065(B2) 申请公布日期 2013.03.26
申请号 US201213617421 申请日期 2012.09.14
申请人 MOCHIZUKI HIDEO;RENESAS ELECTRONICS CORPORATION 发明人 MOCHIZUKI HIDEO
分类号 G11C7/10 主分类号 G11C7/10
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