| 摘要 |
PURPOSE: A compound semiconductor device and a manufacturing method thereof are provided to prevent the reaction of Ga and Si by using a Si oxide layer. CONSTITUTION: A Si oxide layer(3) is formed on a Si substrate. A nucleation layer(2) is formed on the Si oxide layer to expose a part of the Si oxide layer. A compound semiconductor stack structure is formed on the Si oxide layer and the nucleation layer. The compound semiconductor stack structure has an electron moving layer(5) and an electron supplying layer(7). [Reference numerals] (1) Si substrate; (11d) Drain electrode; (11g) Gate electrode; (11s) Source electrode; (13g,2a,10s,10d) Opening part; (14,12) Insulating film; (2) AIN layer; (20) Element isolation region; (3) Si oxide layer; (4) Buffer layer; (5) Electron travel layer; (6) Spacer layer; (7) Electron supply layer; (8) Cap layer; (9) Compound semiconductor stacked structure |
