| 摘要 |
PURPOSE: A bonding method, a computer storage medium, a bonding apparatus, and a bonding system are provided to improve a bonding throughput of a support wafer and a target wafer by constantly maintaining a temperature of a heating device. CONSTITUTION: After an adhesive is coated on a target wafer(A1), the target wafer is heated at a preset temperature(A2). The target wafer is located on the upper side of a first maintaining unit in a bonding part of a bonding apparatus. The target wafer is preheated by a heating device of the first maintaining unit(A4). A support wafer is preheated by a thermal process plate in a preheating unit of the bonding apparatus(A8). A target substrate and a support substrate are absorbed and maintained in the first maintaining unit and a second maintaining unit. The target substrate is bonded to the support substrate by compressing the second maintaining unit to the first maintaining unit when each substrate is heated by the heating device of each maintaining unit(A13). [Reference numerals] (A1) Applying adhesive on a processing target wafer; (A10) Adjusting positions in the horizontal direction of the processing target wafer and the supporting wafer; (A11) Adjusting positions in the vertical direction of processing target wafer and supporting wafer; (A12) Bonding the processing target wafer and the supporting wafer together; (A13) Joining the processing target wafer and the supporting wafer together; (A2) Heating the processing target wafer to a predetermined temperature; (A3) Adjusting orientation in the horizontal direction of the processing target wafer; (A4) Preheating the processing target wafer; (A5) Mounting the processing target wafer on a first holding unit; (A6) Adjusting orientation in the horizontal direction of a supporting wafer; (A7) Reversing front and rear surfaces of the supporting wafer; (A8) Preheating the supporting wafer; (A9) Holding the supporting wafer on a second holding unit |
