发明名称 |
Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by forming phosphorus-boron compounds |
摘要 |
The invention concerns an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention provides an apparatus and a method which mix an unpurified trichlorosilane with purified hydrogen gas from an activated carbon tower. The mixture is sent to a distillation apparatus for purifying trichlorosilane. |
申请公布号 |
US8404205(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US20110986794 |
申请日期 |
2011.01.07 |
申请人 |
PRINE LAURA;HALSTEAD RICHARD M.;KEEVAN MICHAEL W.;MITSUBISHI POLYCRYSTALLINE SILICON AMERICA CORPORATION (MIPSA);MITSUBISHI MATERIALS CORPORATION (MMC) |
发明人 |
PRINE LAURA;HALSTEAD RICHARD M.;KEEVAN MICHAEL W. |
分类号 |
C01B33/03;C01B33/035 |
主分类号 |
C01B33/03 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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