发明名称 Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by forming phosphorus-boron compounds
摘要 The invention concerns an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention provides an apparatus and a method which mix an unpurified trichlorosilane with purified hydrogen gas from an activated carbon tower. The mixture is sent to a distillation apparatus for purifying trichlorosilane.
申请公布号 US8404205(B2) 申请公布日期 2013.03.26
申请号 US20110986794 申请日期 2011.01.07
申请人 PRINE LAURA;HALSTEAD RICHARD M.;KEEVAN MICHAEL W.;MITSUBISHI POLYCRYSTALLINE SILICON AMERICA CORPORATION (MIPSA);MITSUBISHI MATERIALS CORPORATION (MMC) 发明人 PRINE LAURA;HALSTEAD RICHARD M.;KEEVAN MICHAEL W.
分类号 C01B33/03;C01B33/035 主分类号 C01B33/03
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