发明名称 |
Post-deposition cleaning methods and formulations for substrates with cap layers |
摘要 |
One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with a solution comprising an amine to provide a pH for the cleaning solution of 7 to about 13. Another embodiment of the presented invention is a method of cleaning substrates. Still another embodiment of the present invention is a formulation for a cleaning solution. |
申请公布号 |
US8404626(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US20080334462 |
申请日期 |
2008.12.13 |
申请人 |
KOLICS ARTUR;LI SHIJIAN;ARUNAGIRI TIRUCHIRAPALLI;THIE WILLIAM;LAM RESEARCH CORPORATION |
发明人 |
KOLICS ARTUR;LI SHIJIAN;ARUNAGIRI TIRUCHIRAPALLI;THIE WILLIAM |
分类号 |
C11D3/26;C09K13/00;C11D3/20;C11D3/43 |
主分类号 |
C11D3/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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