| 发明名称 |
Structure and method for manufacturing interconnect structures having self-aligned dielectric caps |
| 摘要 |
Interconnect structures having self-aligned dielectric caps are provided. At least one metallization level is formed on a substrate. A dielectric cap is selectively deposited on the metallization level. |
| 申请公布号 |
US8404582(B2) |
申请公布日期 |
2013.03.26 |
| 申请号 |
US20100773306 |
申请日期 |
2010.05.04 |
| 申请人 |
HORAK DAVID V;NOGAMI TAKESHI;PONOTH SHOM;YANG CHIH-CHAO;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HORAK DAVID V;NOGAMI TAKESHI;PONOTH SHOM;YANG CHIH-CHAO |
| 分类号 |
H01L21/4763;H01L23/48 |
主分类号 |
H01L21/4763 |
| 代理机构 |
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