发明名称 Manufacturing method of semiconductor device
摘要 A manufacturing method of a semiconductor device, includes: forming grooves from a first surface side of a semiconductor wafer; separating plural chip areas into pieces by grinding a second surface of the semiconductor wafer after a protection sheet is attached to the first surface of the semiconductor wafer; attaching a laminated film in which a dicing film and an adhesive film are sequentially laminated on a supporting film composed of a resin film with high modulus of elasticity to the second surface of the semiconductor wafer; and cutting the adhesive film.
申请公布号 US8404567(B2) 申请公布日期 2013.03.26
申请号 US20100715668 申请日期 2010.03.02
申请人 DOHMAE YUSUKE;KABUSHIKI KAISHA TOSHIBA 发明人 DOHMAE YUSUKE
分类号 H01L21/46 主分类号 H01L21/46
代理机构 代理人
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