发明名称 |
Semiconductor device having display device |
摘要 |
A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals).
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申请公布号 |
US8405149(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US20080121896 |
申请日期 |
2008.05.16 |
申请人 |
OHTANI HISASHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI HISASHI |
分类号 |
H01L29/72;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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