发明名称 |
Interconnect structure for integrated circuits |
摘要 |
The present invention discloses an interconnect structure for an integrated circuit formed on a semiconductor substrate. In one embodiment, the first conductive layer is formed above the semiconductor substrate. A first via contact is formed on the first conductive layer. A second via contact is formed on the first via contact. A second conductive layer is formed on the second via contact. One of the first and second via contacts has a cross-sectional area substantially larger that of another for improving a landing margin thereof, thereby eliminating a need of using a landing pad between the first and second via contacts. |
申请公布号 |
US8405216(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US20050170369 |
申请日期 |
2005.06.29 |
申请人 |
LIAW JHON JHY;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIAW JHON JHY |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|