| 发明名称 |
Semiconductor device and method for manufacturing same |
| 摘要 |
A semiconductor device of the present invention includes: a semiconductor layer; a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and a gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr. |
| 申请公布号 |
US8404575(B2) |
申请公布日期 |
2013.03.26 |
| 申请号 |
US201113311850 |
申请日期 |
2011.12.06 |
| 申请人 |
KANEKO AKIO;INUMIYA SEIJI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KANEKO AKIO;INUMIYA SEIJI |
| 分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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