发明名称 Strapping contact for charge protection
摘要 A semiconductor device includes a substrate and a memory cell formed on the substrate. The memory cell includes a word line. The semiconductor device also includes a protection area formed in the substrate, a conductive structure configured to extend the word line to the protection area, and a contact configured to short the word line and the protection area.
申请公布号 US8404541(B2) 申请公布日期 2013.03.26
申请号 US20100790578 申请日期 2010.05.28
申请人 ZHENG WEI;YANG JEAN;RANDOLPH MARK;KWAN MING;HE YI;LIU ZHIZHENG;DING MENG;SPANSION LLC 发明人 ZHENG WEI;YANG JEAN;RANDOLPH MARK;KWAN MING;HE YI;LIU ZHIZHENG;DING MENG
分类号 H01L21/8247 主分类号 H01L21/8247
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